Homray Material Technology(HMT)was established in 2009, is a leading high tech manufacturer and supplier of SiC Substrate Wafer. HMT has on axis & off axis SiC substrate and established whole production line including the SiC crystal growth equipment,crystal processing, wafer processing, polishing, cleaning and testing.As the leading compound semiconductor wafer, HMT offers the best price on the market for high quality SiC substrate 4 inch and 6inch both N type and Semi-insulating type.As the leading SiC Wafer and SiC Epi Wafer manufacturer in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.HMT provides both standard and customized high quality single crystals SiC wafers and substrates for a wide range of
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SiC Ingots 6 inch
Diameter: 150±0.2mm
Thickness: Min >15mm
Type: 4H-N or 4H-SI
Grade: D Grade / P Grade -
碳化硅晶锭 N型/SI型
长度:Min ≥15mm
尺寸:4英寸及6英寸
类型:导电N型/半绝缘SI型
包装:单晶锭密封包装 -
6 inch 4H-N SiC Substrate Wafer
Silicon Carbide (SiC) Substrate
Diameter: 150±0.2mm
Thickness:350±25um
Doping : Nitrogen -
6 inch 4H-SI SiC Substrate Wafer
Silicon Carbide (SiC) Substrate
Diameter: 150±0.2mm
Thickness:500±25um
Doping : Un-doped