Silicon Carbide-The Core Of The Third Generation Of Semiconductor Materials

SiC Material has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume. The band gap width of SiC is about 3.2eV, and the wide band width of Silicon is 1.12eV, which is about 1/3 of the band gap width of SiC, indicating that Silicon Carbide has significantly better high pressure resistance than Silicon material.

Homray Material Technology as the leading manufacturer of SiC wafer, we provide 4 inch and 6inch 4H-SiC substrate with semi-insulating type. We offers the best prices on the market for high-quality SiC substrates both N type and SI types. Our SiC wafers have been widely used by small and large semiconductor device companies as well as research insititute worldwide.
 

SiC substrate is divided according to resistivity: Semi-Insulating SiC substrate: refers to the SiC substrate with resistivity higher than 1E9Ω.cm, which is mainly used to manufacture GaN microwave RF devices. Microwave radio frequency devices are basic components in the field of wireless communication. China is vigorously developing 5G technology to release the demand for SiC substrates.

Silicon carbide(SiC) based GaN epitaxy sheet can be further made into GaN radio frequency device. Microwave radio frequency components is the foundation of realize the signal sending and receiving components, is the core of the wireless communication, mainly including RF switch, LNA, power amplifier, filter and other devices, among them, the power amplifier is RF signal amplification device, directly determine the mobile terminal and base station of wireless communication distance, key parameters such as the signal quality.