The third generation semiconductor uses SiC and gallium nitride (GaN) as the main materials, which is different from the first generation semiconductor which uses Silicon (Si) and germanium (Ge) as the main materials, and the second generation semiconductor uses gallium arsenide (GaAs), indium phosphide (InP) and aluminum gallium arsenide (AlGaAs) as the main materials.

SiC Material has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume. The band gap width of SiC is about 3.2eV, and the wide band width of Silicon is 1.12eV, which is about 1/3 of the band gap width of SiC, indicating that Silicon Carbide has significantly better high pressure resistance than Silicon material.

November 25 news, with the rapid development of the market, driving the automotive Power Module (Power Module, PM) market expansion year by year, 2030 market size is estimated to explode 4.6 times, 2030 using silicon carbide (SiC) Power semiconductor market size is estimated to soar 17 times,Surpass si-PM market which uses silicon (Si) power semiconductor.

GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to market research firm Strategies Unlimited. By 2007 this is predicted to soar to $4.5 billion, with GaN-based LEDs, lasers and electronic devices contributing $4 billion, $402 million and $129 million, respectively.Today, GaN substrates are produced by vapor-phase transport

Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.This can be used in a high-capacity wireless network with coverage over a radius of several kilometers. In areas where fiber-optic cable is difficult to lay, to achieve high-speed wireless communications of several gigabits per second, one promising approach is to use high-frequency bands, such as the W band, which uses a wide frequency band.

We are pleased to offer GaN substrate to our customers including many who are developing better and more reliable for GaN HEMTs, which have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. Second generation technology with shorter gate lengths will be addressing higher frequency telecom and aerospace applications. Our GaN substrate has excellent properties, it’s a very hard, mechanically stable wide bandgap semiconductor material with high heat