SiC Wafer-Based RF Electronics 5G Wireless

Gallium nitride RF devices based on SiC Substrate have the advantages of high thermal conductivity of SiC and high power RF output of gallium nitride in high frequency band, which can meet the requirements of HIGH frequency performance and high power processing capability of 5G communication. At present, GaN Epi on SiC Substrate RF devices have gradually become the mainstream technology of 5G power amplifiers, especially acer power amplifiers. 
 

To meet the massive growth in consumer demand for bandwidth, wireless service providers around the world are racing to deploy 5G wireless and exert their influence to advance the establishment of supply chain ecosystems and technology standards. The latter will leverage the high speed capabilities of the millimeter wave band using GaN on SiC Substrate (GaN/SiC) power amplifiers. Concurrently, the widely anticipated adoption of beam-forming technology is expected to further increase the demand for GaN/SiC power amplifiers by approximat.