SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability.

Currently silicon carbide (SiC) is widely used for high power MMIC applications. SiC is also used as a substrate for epitaxial growth of GaN for even higher power MMIC devices.SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher thermal conductivity combined with wide band gap and high critical field give SiC semiconductors an advantage when high power is a key desirable device feature.