Silicon Carbide Epitaxial Wafer
Size: 3'' 4'' 6''
Type: N-Type/ P-Type
Dopant: Nitrogen/Aluminum
Thickness:0.2~50μm
Home<<1
>>Last
Homray Material Technology. All rights Reserved.
E-mail:kim@homray-material.com；tina@homray-material.com
M.P: +86-15366208370 ; +86-15366203573
Gallium Nitride (GaN) Substrate Website: www.gansubstrate-hmt.com