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4inch 4H-N SiC Substrate Wafer
Silicon Carbide (SiC) Substrate
Diameter: 100±0.5mm
Thickness:350±25um
Doping : Nitrogen -
6 inch 4H-N SiC Substrate Wafer
Silicon Carbide (SiC) Substrate
Diameter: 150±0.2mm
Thickness:350±25um
Doping : Nitrogen
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