6 inch 4H-N SiC Substrate Wafer

Homray Material Technology provide high quality 6inch SiC Substrate wafer in different grades. Standard quality wafers meet high demands for Production purposes, Research grade substrates are the inexpensive alternative for research and development and for process trials. Compared to Si wafer and GaN wafer , SiC substrate wafer is more suitable for high temperature and high power device. Homray material usually offer 4inch and 6 inch 4H-N conductive type SiC wafer.We also provide semi-insualting SiC wafer, please click to visit.

Below is the brief spec, please contact us for detailed PDF spcification with email or mobile phone.

• Diameter: 150±0.2 mm
• Thickness:350 μm±25μm
• Orientation:Off axis : 4.0° toward < 1120>±0.15°
• Resistivity:0.015~0.025 Ω·cm
• Double Side Polished

Compared with traditional silicon materials, silicon carbide SiC has three most significant characteristics: large band gap width, high critical breakdown field strength and high thermal conductivity. Specifically, in terms of band gap width, 4H silicon carbide is three times that of silicon, so it can work stably at higher temperatures (such as automotive electronics); In terms of the critical breakdown field strength, silicon carbide can reach 10 times that of silicon, and can produce high-voltage power devices under the condition of higher impurity concentration and thinner drift layer thickness, so as to realize the three characteristics of "high voltage", "low conduction resistance" and "high frequency" at the same time.In terms of thermal conductivity, silicon carbide can reach 3 times that of silicon, which can improve the thermal conductivity, and high thermal conductivity is also conducive to the development of electronic components to more miniaturized.

HMT SiC Wafer Package With Cassette