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Home > Products > SiC Substrate Wafer > 4H-SI Type SiC Substrate
  • 4 inch Semi-insulating SiC Substrate

    Silicon Carbide (SiC) Substrate
    Diameter: 100±0.5mm 
    Thickness:500
    ±25um
    Doping     : Un-doped

  • 6 inch 4H-SI SiC Substrate Wafer

    Silicon Carbide (SiC) Substrate
    Diameter: 150±0.2mm 
    Thickness:500
    ±25um
    Doping     : Un-doped

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