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4 inch Semi-insulating SiC Substrate
Silicon Carbide (SiC) Substrate
Diameter: 100±0.5mm
Thickness:500±25um
Doping : Un-doped -
6 inch 4H-SI SiC Substrate Wafer
Silicon Carbide (SiC) Substrate
Diameter: 150±0.2mm
Thickness:500±25um
Doping : Un-doped
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