4 inch Semi-insulating SiC Substrate

Homray Material Technology as the professional SiC Substrate manufacturer and supplier, HMT offers the favourable price on the market for high quality 4 inch Semi-Insulating（SI） SiC substrate wafer. 4H-SI SiC substrate are widely used in high voltage and high current application field, including electric vehicles, electric vehicle charging infrastructure, solar energy and offshore wind power and other green power generation equipment etc. The best grade of SiC wafer MPD in HMT is ≤ 0.5 cm-².

Below is the brief spec of 4H-SI SiC Substrate, please contact us with email or phone for detailed PDF specification. 

• Diameter: 100±0.2 mm
• Thickness:500 μm±25μm
• Orientation:On axis : <0001>±0.2°
• Resistivity:>1E9 Ω·cm
• Double Side Polished
  
  

Un-doped SI Type SiC Substrate Wafer Picture
 

Based on the SiC characteristics, SiC devices using SiC wafer have more obvious advantages compared with silicon based devices, which are embodied in:

(1) Lower impedance, can reduce the product volume, improve conversion efficiency;
(2) higher frequency, the working frequency of silicon carbide devices can reach 10 times of silicon based devices, and the efficiency does not decrease with the increase of frequency, can reduce the energy loss;
(3) Can operate at a higher temperature, while the cooling system can be done more simply. SiC power devices can work at temperatures above 600℃, four times that of the same Si based devices, and can withstand more extreme working environments.