6 inch 4H-SI SiC Substrate Wafer

Homray Material Technology provides the favourable price on the market for high quanlity 4H-SI SiC Substrate Wafer with 4 inch and 6 inch. Our price matching policy guarantees you the best price for the SiC Substrate with comparable specifications.  Our SiC wafers have been widely used by small and large semiconductor device companies as well as research labs and universities worldwide. Customized SiC wafer can be made to meet customer's particular requirements and specifications. SiC Epi-wafers also can be custom made upon request.

Below is 4H-SI SiC Substrate brief spec, Both N-Type and Semi-Insulating Type 4H 6 inch SiC wafers are available.Please contact us for quotation and lead time.

• Diameter: 150±0.2 mm
• Thickness:500 μm±25μm
• Orientation:On axis : <0001>±0.2°
• Resistivity:>1E9 Ω·cm
• Double Side Polished
  
  

 

Power conversion electronics for high efficiency electric vehicles need a combination of high power density, high efficiency and high temperature operation that is only afforded by advanced material systems based on SiC substrates. HMT market-leading SiC substrates have best-in-class quality and low dislocation density. Meanwhile, we also offer dummy grade and research grade for university research insititute.

SiC Material has the following properties:

• Wide Energy Bandgap
• High electrical breakdown field
• High saturation drift velocity
• High thermal conductivity

SiC is regarded as a kind of beyond the limits of silicon power device material, compared with silicon devices in the field of new energy better performance, SiC power devices are widely used light volt inverter, rail transportation, as well as the primary drive in the new energy automotive inverter, DC/DC converter, car charger and charging system of charging pile, etc.