SiC Ingots 6 inch
Diameter: 150±0.2mm
Thickness: Min >15mm
Type: 4H-N or 4H-SI
Grade: D Grade / P Grade
Product Description
HMT is a trusted manufacturer of SiC Ingots and SiC substrates. We provide both standard SiC ingots and custom-made SiC substrate wafer to meet customer specific requirements. Purchase high quality SiC ingots and SiC wafer from HMT company today and discuss your project requirments now.
HMT has a complete SiC(silicon carbide) wafer substrate production line integrating SiC ingots growth, crystal processing, wafer processing, polishing, cleaning and testing. We supply commercial 4H SiC wafers with semi insulation and conductivity in on-axis or off-axis, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.
Silicon Carbide SiC material can be used as substrate for GaN-epitaxy to produce LEDs in the blue/UV range of the spectrum. SiC is the material of choice because it offers low lattice mismatch for III-nitride epitaxial layers and high thermal conductivity (important for lasers).
SiC Ingots Package
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