SiC Ingots 4 inch

Homray Material Technology offer 4 inch SiC ingots and SiC wafer to meet your project requirements. Best-in-class technical support and customer services are provided to you from HMT company.SiC ingots can be cut to 4 inch and 6 inch N type/SI type SiC substrate. Meanwhile,SiC ingots have been widely used by many ingot wire-saw manchine manufacturers in domestic and abroad.



HMT has a complete SiC(silicon carbide) wafer substrate production line integrating SiC ingots growth, crystal processing, wafer processing, polishing, cleaning and testing. We supply commercial 4H SiC wafers with semi insulation and conductivity in on-axis or off-axis, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.



Power electronics based on SiC wafer may save billions of Euros due to an increase of efficiency of the electric power distribution system. According to estimations power plants generate an excess power reserve of around 20 % of consumed electricity to make sure that load changes or component failures do not affect service. Use of power devices makes a smart management of ressources possible and would drive down the generated power reserve to a minimum. Forecasts say that a reduction of power reserve of 5 % may result in savings of 50 billion US$ in the US alone over 25 years.
 

SiC Ingots Package